講演情報
[23a-P07-8]Relationship between the sputtering power and the properties of RuTe2 thin film
〇(D)SHIHYUAN LI1, Yi Shuang2, Daisuke Ando1, Yuji Sutou1,2 (1.Tohoku Univ., 2.Tohoku Univ. AIMR)
キーワード：
chalcogenide、RuTe2、thin film
PCRAM (Phase Change Random Access Memory) operates by leveraging the resistivity contrast between the crystalline and amorphous phases of the phase change material for data storage. However, its energy consumption is substantial, as it is necessary to heat the material beyond its melting point and then rapidly cooling it to achieve the amorphous phase. By examining the phase diagram of the Ru-Te, it reveals that RuTe2 exhibits a marcasite phase at low temperatures and a pyrite phase at high temperatures. If these two polymorphic phases of RuTe2 show a substantial resistivity difference, there is potential to create a novel type of PCRAM that operates without the need for melting.