[23a-P07-1~19] 6.4 Thin films and New materials

[23a-P07-9] Growth of p-type oxide semiconductor Bi₂WO₆ by solid-phase reaction

〇Ichiro Takakuwa¹, Ryusuke Seino^1,2, Seiya Suzuki¹, Kenichi Ozawa³, Hiraku Ogino², Keishi Nishio¹, Makoto Minohara² (1.Tokyo Univ. Sci., 2.AIST, 3.KEK)

Keywords:

oxide semiconductor,solid-phase epitaxy,suppressing defect