[23p-12E-1~13] 6.2 Carbon-based thin films

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-12E-11] Fabrication of Multi-Finger Diamond Vertical MOSFETs with p+ substrate as source

〇(B)Yuki Takano¹, Akira Takahashi¹, Kosuke Ota^1,2, Fuga Asai¹, Yukihiro Chou¹, Atsushi Hiraiwa³, Tatsuya Fujishima², Hiroshi Kawarada^1,2,3 (1.Waseda Univ., 2.Power Diamond Systems, Inc., 3.Kagami Memorial research Inst.)

Keywords:

diamond,vertical Multi-Finger MOSFET

In this study, we fabricated vertical multi-finger MOSFETs with P+ substrate as source. It achieved I_D,max: 297.4 mA/mm at V_GS: -30 V and V_DS: -40 V. The current density increased by a factor of 1.5 when the trench width(W_T) was increased by a factor of 2. This is thought to be due to the area where the gate contacts the p+ substrate is enlarged by enlarging the W_T, facilitating the injection of holes from the p+ substrate. In addition, by doubling the number of fingers, the actual current increased approximately 2-fold while maintaining the current density even when (total gate width)W_GT was enlarged by a factor of 2.