The 71st JSAP Spring Meeting 2024
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Session Details

Oral presentation6 Thin Films and Surfaces : 6.2 Carbon-based thin films

[23p-12E-1~13]6.2 Carbon-based thin films

Sat. Mar 23, 2024 1:30 PM - 5:00 PM JST
Sat. Mar 23, 2024 4:30 AM - 8:00 AM UTC
12E (Building No. 1)
Toshiharu Makino(AIST), Yuki Katamune(KIT), Kimiyoshi Ichikawa(Kanazawa Univ.)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)English Presentation

[23p-12E-1]Effect of seed density on the morphology of polycrystalline diamond films

〇David VazquezCortes1, Stoffel Janssens1, Eliot Fried1 (1.OIST)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-12E-2]Effect of plasma parameters on diamond growth using microwave plasma CVD

〇Kaishu Nitta1, Takehiro Shimaoka1, Hideaki Yamada1 (1.AIST)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[23p-12E-3]Step pinning on Mn-doped diamond (111) surfaces

〇Makoto Kawano1, Kazuyuki Hirama1, Yoshitaka Taniyasu1, Kazuhide Kumakura1 (1.NTT BRL)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-12E-4]Atomic observation of diamond (001) surfaces with non-contact atomic force microscopy

〇Yuuki Yasui1, Runnan Zhang1, Masahiro Fukuda2, Taisuke Ozaki2, Masahiko Ogura3, Toshiharu Makino3, Daisuke Takeuchi3, Yoshiaki Sugimoto1 (1.GSFS, Univ. Tokyo, 2.ISSP, Univ. Tokyo, 3.AIST)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)English Presentation

[23p-12E-5]Adatom structures on the clean diamond (001) surfaces observed with non-contact atomic force microscopy

〇(DC)RUNNAN ZHANG1, Yuuki Yasui1, Masahiro Fukuda2, Masahiko Ogura3, Toshiharu Makino3, Taisuke Ozaki2, Daisuke Takeuchi3, Yoshiaki Sugimoto1 (1.Dept. Adv. Mater. Sci., Univ. Tokyo, 2.ISSP, Univ. Tokyo, 3.AIST)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)English Presentation

[23p-12E-6]Air Damping Effect on Quality-Factor in High-Order Resonance Modes of Single-Crystal Diamond Microcantilevers

〇(DC)Guo Chen1,2, Zilong Zhang1, Keyun Gu1, Liwen Sang1, Satoshi Koizumi1, Yasuo Koide1, Zhaohui Huang2, Meiyong Liao1 (1.National Institute for Materials Science, 2.China University of Geosciences (Beijing))
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[23p-12E-7]Estimation of diffusion coefficient of Be in diamond epitaxial growth thin film

〇Yasuto Miyake1, Hiroki Okuno1, Hideyuki Watanabe1,2 (1.RIKEN RNC, 2.AIST)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[23p-12E-8]Compensation effect of p-type conductive layer in high-quality homoepitaxial diamond fabricated by ion implantation with low B concentration

〇Yuhei Seki1, Minami Yoshihara1, Yasushi Hoshino1 (1.Kanagawa Univ.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[23p-12E-9]Contact Resistance as a Function of Impurity Concentration for N-type Diamond

〇Tsubasa Matsumoto1, Mikiya Mura1, Yuki Matsushima1, Taichi Miyazaki1, Kan Hayashi1, Kimiyoshi Ichikawa1, Toshiharu Makino2, Takao Inokuma1, Satoshi Yamasaki1, Norio Tokuda1 (1.Kanazawa Univ., 2.AIST)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[23p-12E-10]Boron-doped diamond metal-oxide-semiconductor field-effect transistors

〇Jiangwei LIU1, Tokuyuki Teraji1, Bo Da1, Yasuo Koide1 (1.NIMS)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-12E-11]Fabrication of Multi-Finger Diamond Vertical MOSFETs with p+ substrate as source

〇(B)Yuki Takano1, Akira Takahashi1, Kosuke Ota1,2, Fuga Asai1, Yukihiro Chou1, Atsushi Hiraiwa3, Tatsuya Fujishima2, Hiroshi Kawarada1,2,3 (1.Waseda Univ., 2.Power Diamond Systems, Inc., 3.Kagami Memorial research Inst.)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-12E-12]The Effect of Heavily Boron Doped Layer on (001) C-H Diamond MOSFET

〇(B)Ryosuke Yamamoto1, Kento Narita1, Kosuke Ota1,2, Akira Takahashi1, Nobutaka Oi2, Atsushi Hiraiwa1, Tatsuya Fujishima2, Hiroshi Kawarada1,2,3 (1.Waseda Univ., 2.Power Diamond Systems, Inc., 3.Kagami Memorial Research Inst.)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[23p-12E-13]Field-effect transistor fabricated on a CVD-grown diamond with a h-BN gate insulator

〇Yosuke Sasama1, Takuya Iwasaki1, Masataka Imura1, Kenji Watanabe1, Takashi Taniguchi1, Takahide Yamaguchi1,2 (1.NIMS, 2.Univ. of Tsukuba)
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