Presentation Information

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-12E-12]The Effect of Heavily Boron Doped Layer on (001) C-H Diamond MOSFET

〇(B)Ryosuke Yamamoto¹, Kento Narita¹, Kosuke Ota^1,2, Akira Takahashi¹, Nobutaka Oi², Atsushi Hiraiwa¹, Tatsuya Fujishima², Hiroshi Kawarada^1,2,3 (1.Waseda Univ., 2.Power Diamond Systems, Inc., 3.Kagami Memorial Research Inst.)

Keywords:

diamond,MOSFET,contact resistance

The effect of heavily boron-doped layer (p⁺ layer) on the contact between diamond semiconductor and metal electrode was investigated in (001) diamond. The contact resistance (Rc) calculated by transfer length method (TLM) measurements was R_C = 19 Ωmm with p⁺ layer and R_C = 40 Ωmm without p⁺ layer. This means that p⁺ layer reduced R_c by half. In addition, device measurements of the lateral MOSFETs showed improved subthreshold swing, low on-resistance, and negative shift in threshold voltage.

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