[23p-12E-1~13] 6.2 Carbon-based thin films

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[23p-12E-8] Compensation effect of p-type conductive layer in high-quality homoepitaxial diamond fabricated by ion implantation with low B concentration

〇Yuhei Seki¹, Minami Yoshihara¹, Yasushi Hoshino¹ (1.Kanagawa Univ.)

Keywords:

ion implantation,Hall effect,Diamond semiconductor