[23p-12H-1~11] 6.1 Ferroelectric thin films

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-12H-4] Growth of MgSiN₂ Films and Characterization of Their Properties

〇(M1)Sotaro Kageyama¹, Kazuki Okamoto¹, Shinnosuke Yasuoka¹, Yoshihiro Ueoka², Masami Mesuda², Hiroshi Funakubo¹ (1.Tokyo Tech., 2.Tosoh Corp.)

Keywords:

Ferroelectric material

Wurtzite-structured nitride ferroelectrics, such as (Al,Sc)N, exhibit larger remanent polarization values than conventional materials. However, a large coercive field must be deduced to achieve low operating voltage. We considered extending the composition search range from simple nitrides, such as AlN, to multiple nitrides. In this study, we focused on MgSiN₂, which is predicted to swich the polarization at lower coercive field and have a larger dielectric breakdown than those of AlN. In this study, MgSiN₂ thin films were grown by a reactive sputtering method, and their crystal structures and properties were evaluated.