Presentation Information
[23p-12J-10]Formation of Ru crystal nuclei on inter-Layer dielectrics using new electrolytic technology
〇Haruo Iwatsu1 (1.KMP Lavatory)
Keywords:
semiconductor,wiring,Plating
In conventional micro-wiring processes,wiring materials have been embedded using electrolytic plating,with barrier and seed films serving as conductive films,but recently wiring materials such as Co and Ru,which do not require high-resistance barrier films,are being considered. With the new electrolytic technology,we were able to achieve bottom-up film formation from the connection via of the underlying wiring without using a barrier film. This time,we report that we formed Ru crystal nuclei directly on the low-K film so that the film could be formed in a wiring trench without vias.