[23p-12J-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[23p-12J-5] [The 15th Silicon Technology Division Young Researcher Award] 3D integration using wafer-to-wafer bonding and its future

〇Fuya Nagano¹ (1.Tokyo Electron Kyushu Ltd.)

Keywords:

3D integration,wafer bonding,SiCN

3D integration technology is becoming a promising semiconductor integration technology that weaken the slowdown in performance improvement of semiconductor devices, increase the degree of integration per unit area, and provide the chip more functional diversity. This lecture will introduce the awarded paper that elucidated the bonding mechanism of SiCN, an bonding dielectric used for wafer bonding, and will provide an overview of 3D integration using wafer bonding and its future prospects.