[23p-12K-1~15] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[23p-12K-14] Mechanism of silica conversion of polysilazanes by water vapor low-temperature
plasma jet irradiation

〇Kohei Sakaike¹, Seiichiro Higashi² (1.NIT, Hiroshima College, 2.Hiroshima Univ.)

Keywords:

polysilazane,SiO2,Low-temperature plasma

We have successfully achieved silica conversion at low temperatures by irradiating polysilazane (PHPS) thin films (47nm) with a low-temperature plasma jet of a gas mixture of argon (Ar) and water vapor. The maximum substrate temperature reached was 52°C. In this study, we attempted to elucidate the mechanism of silica conversion of PHPS by low-temperature plasma jet irradiation of a gas mixture of Ar and water vapor by real-time FT-IR measurements.