The 71st JSAP Spring Meeting 2024
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Session Details

Oral presentation13 Semiconductors : 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[23p-12K-1~15]13.4 Si processing /Si based thin film / MEMS / Equipment technology

Sat. Mar 23, 2024 1:30 PM - 6:00 PM JST
Sat. Mar 23, 2024 4:30 AM - 9:00 AM UTC
12K (Building No. 1)
Yukinori Morita(AIST), Wenchang Yeh(Shimane Univ.), Tatsuya Okada(Univ. of the Ryukyus)
1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[23p-12K-1][The 45th Paper Award Speech] Tendency of crystal orientation rotation toward stable {001}<100> during lateral crystal growth of Si thin film sandwiched by SiO2

〇Wenchang Yeh1, Toshiki Shirakawa, Anh Hoang Pham1 (1.Shimane Univ.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[23p-12K-2]Direct nano-lithography in Ultrathin Silicon Nanosheets Utilizing Helium Ion Microscopy

〇Yukinori Morita1, Kensuke Inoue2, Ryuichi Sugie2, Shinichi Ogawa1 (1.AIST, 2.TRC)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[23p-12K-3]Micro/nano laser processing of Si-based nanofilms

〇Yuuki Uesugi1, Tetsuro Kobayashi1, Yuichi Kozawa1, Shinichi Sato1 (1.Tohoku Univ.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-12K-4]Preparation of (001) Single Crystalline Stripes by μCLS using Sputtered Si Films

〇(B)Ryota Nosu1, Wenchang Yeh1 (1.Shimane Univ.)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[23p-12K-5]Linear agglomeration during the CW-laser lateral-crystallization (IV)

〇Nobuo Sasaki1, Satoshi Takayama2, Rikuto Sasai2, Yukiharu Uraoka2 (1.Sasaki Consulting, 2.NAIST)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[23p-12K-6][JSAP Kenji Natori Award Speech] Electrical property control of polycrystalline Ge-based group IV semiconductor films

〇Koki Nozawa1 (1.Univ. of. Tsukuba)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[23p-12K-7]SiGe film growth via pulsed laser annealing of screen-printed pastes on Si

〇Takeshi Sato1, Satoru Miyamoto1, Shota Suzuki2, Hideaki Minamiyama2, Marwan Dhamrin2,3, Noritaka Usami1,4,5 (1.Grad. Eng., Nagoya Univ., 2.Toyo Aluminium K.K., 3.Osaka. Univ., 4.InFuS, Nagoya Univ., 5.IMaSS, Nagoya Univ.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[23p-12K-8]GeSn film growth via pulsed laser annealing of screen-printed pastes on Ge

〇Takeshi Sato1, Satoru Miyamoto1, Shota Suzuki2, Hideaki Minamiyama2, Marwan Dhamrin2,3, Noritaka Usami1,4,5 (1.Grad. Eng., Nagoya Univ., 2.Toyo Aluminium K.K., 3.Osaka. Univ., 4.InFuS, Nagoya Univ., 5.IMaSS, Nagoya Univ.)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[23p-12K-9]Low Temperature Growth of Si/Ge Films on SiO2 and Analyses of Their Structure and Electric Properties

〇Keisuke Arimoto1, Hiroto Kondo1, Taketo Kawamura1, Kiyokazu Nakagawa1, Kosuke Hara1, Junji Yamanaka1 (1.Univ. of Yamanashi)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-12K-10]Grain boundary characterization of polycrystalline Ge thin films by surface potential measurement

〇Shintaro Maeda1, Takashi Suemasu1, Kaoru Toko1 (1.Univ. of Tsukuba)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-12K-11]4-terminal poly-Si vertical TFTs on glass substrates

〇(M1)Kosei Suzuki1, Kotaro Kusunoki1, Akito Hara1 (1.Tohoku Gakuin Univ.)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-12K-12]Heterogeneous CTFT for LSI on glass substrates

〇(M1)Yuto Ito1, Akihisa Nagayoshi1, Sho Suzuki1, Akito Hara1 (1.Tohoku Gakuin Univ.)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[23p-12K-13]Performance of DG Cu-MIC p-ch poly-Ge TFTs on plastic substrates and their feasibility for CMOS inverter

〇(B)Akito Kurihara1, Sho Suzuki1, Toshiyuki Tsuchiya2, Tetsuo Okuyama2, Akito Hara1 (1.Tohoku Gakuin Univ., 2.TOYOBO Co., Ltd.)
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[23p-12K-14]Mechanism of silica conversion of polysilazanes by water vapor low-temperature
plasma jet irradiation

〇Kohei Sakaike1, Seiichiro Higashi2 (1.NIT, Hiroshima College, 2.Hiroshima Univ.)
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[23p-12K-15]Thickness Effect on Crystallization by Rapid Thermal Annealing of Sputtered InSb Films Deposited on Glass Using Ne

Ryonosuke Uema1, Shota Oku1, Takashi Noguchi1, Takashi Kajiwara2, Taizoh Sadoh2, 〇Tatsuya Okada1 (1.Univ. Ryukyus, 2.Kyushu Univ.)
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