Presentation Information
[23p-12K-9]Low Temperature Growth of Si/Ge Films on SiO2 and Analyses of Their Structure and Electric Properties
〇Keisuke Arimoto1, Hiroto Kondo1, Taketo Kawamura1, Kiyokazu Nakagawa1, Kosuke Hara1, Junji Yamanaka1 (1.Univ. of Yamanashi)
Keywords:
TFT,Ge,semiconductor
For applications of semiconductor thin film formation on amorphous substrates, higher carrier mobility and lower leakage current are pursued while lower process temperature is required. In this study, Si/Ge structures were grown on glass SiO2 substrates at a low temperature using a molecular beam epitaxy method. Influence of Ge layer thickness on the surface roughness and crystallinity was investigated. P-type TFTs were fabricated under process temperatures below 400 °C. An on/off drain current ratio of 105 was obtained.