[23p-21C-1~16] 15.4 III-V-group nitride crystals

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[23p-21C-5] [The 45th Young Scientist Award Speech] AlN/AlGaN HEMTs with Si-doped degenerate GaN contacts prepared via sputtering

〇Ryota Maeda¹, Kohei Ueno¹, Atsushi Kobayashi², Hiroshi Fujioka¹ (1.IIS, U-Tokyo, 2.Tokyo Univ. of Sci.)

Keywords:

AlGaN,HEMT,Sputtering