The 71st JSAP Spring Meeting 2024
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Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[23p-21C-1~16]15.4 III-V-group nitride crystals

Sat. Mar 23, 2024 1:00 PM - 6:15 PM JST
Sat. Mar 23, 2024 4:00 AM - 9:15 AM UTC
21C (Building No. 2)
Motoaki Iwaya(Meijo Univ.), Hiroto Sekiguchi(Toyohashi Univ. of Tech.), Hiroshi Fujioka(IIS, The University of Tokyo)
1:00 PM - 1:30 PM JST(4:00 AM - 4:30 AM UTC)

[23p-21C-1][The 2nd Diversity & Inclusion Awards Young Female Researchers Award] Study on crystal growth of N-polar/group-III-polar nitride semiconductors and their optical device applications

〇Kanako Shojiki1,2 (1.Grad. Sch. of Eng., Kyoto Univ., 2.Grad. Sch. of Eng., Mie Univ.)
1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[23p-21C-2][The 45th Paper Award Speech] 263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities

〇Hideto Miyake1,3, Kenjiro Uesugi2,3, Shigeyuki Kuboya2, Kanako Shojiki1, Shiyu Xiao2, Masataka Kubo1, Takao Nakamura3,4 (1.Grad. Sch. of Eng., Mie Univ., 2.SPORR, Mie Univ., 3.Grad. Sch. of RIS, Mie Univ., 4.IIS, The Univ. of Tokyo)
2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[23p-21C-3][The 45th Paper Award Speech] AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo–convex pattern AlN on a sapphire substrate

〇Shunya Tanaka1, Shohei Teramura1, Moe Shimokawa1, Kazuki Yamada1, Tomoya Omori1, Sho Iwayama1,2, Kosuke Sato1,3, Hideto Miyake2, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Isamu Akasaki1,4 (1.Meijo Univ., 2.Mie Univ., 3.Asahi Kasei, 4.ARC)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)English Presentation

[23p-21C-4][The 45th Young Scientist Award Speech] InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall

〇Pavel Kirilenko1, Daisuke Iida1, Zhe Zhuang1, Kazuhiro Ohkawa1 (1.KAUST)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[23p-21C-5][The 45th Young Scientist Award Speech] AlN/AlGaN HEMTs with Si-doped degenerate GaN contacts prepared via sputtering

〇Ryota Maeda1, Kohei Ueno1, Atsushi Kobayashi2, Hiroshi Fujioka1 (1.IIS, U-Tokyo, 2.Tokyo Univ. of Sci.)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[23p-21C-6][The 55th Young Scientist Presentation Award Speech] HVPE growth of heavily Sn-doped GaN layers for fabricating low resistivity n-type GaN substrates

〇Kansuke Hamasaki1, Kazuki Ohnishi2, Shugo Nitta2, Naoki Fujimoto2, Hirotaka Watanabe2, Yoshio Honda2,3,4, Hiroshi Amano2,3,4 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.D center, Nagoya Univ., 4.IAR, Nagoya Univ.)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[23p-21C-7][The 55th Young Scientist Presentation Award Speech] Microcavity SHG Device with Ultrashort Laser Pulses

〇Nambu Tomoaki1, Tomohiro Nakahara2, Yuma Yasuda2, Yasufumi Fujiwara2, Masayoshi Tonouti1, Masahiro Uemukai2, Tomoyuki Tanikawa2, Ryuji Katayama2 (1.ILE, Osaka Univ., 2.Osaka Univ.)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-21C-8]Optimization of MicroLED hollowe structure for batch transfer technology

〇Taiki Kitade1, Atsushi Nishikawa2, Alexander Loesing2, Hiroto Sekiguchi1 (1.Toyohashi Tech, 2.ALLOS)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[23p-21C-9]Vertical current injection enabled by transfer to conductive material development of flexible MicroLED film

〇Ryota Kanda1, Taiki Kitade1, Atsushi Nishikawa2, Alexander Loesing2, Hiroto Sekiguchi1 (1.Toyohashi Tech, 2.ALLOS)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[23p-21C-10]Demonstration of micro LED array fabricated on ELO GaN on Sapphire substrate.

〇Yuichiro Hayashi1, Sooyoung Moon1, Akiko Komoda1, Taro Takeuchi1, Tatsuo Tada1, Takeshi Kamikawa1 (1.Kyocera Corp.)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-21C-11]Dependence of stray light in monolithic μLED arrays on sapphire substrate thickness

〇(M1)Naoki Hasegawa1, Tatsunari Saito1, Yoshinobu Suehiro1, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1 (1.Meijo-u University)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-21C-12]Study on improvement of V-J characteristic in GaInN-based blue LED with PEDOT/PSS hole transporting layer

〇(M1)Yuma Kato1, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1, Emi Matsuyama2, Atsushi Suzuki2 (1.Meijo Univ., 2.E&E Evolution Ltd.)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[23p-21C-13]3.5 x 3.5 μm2 GaN blue micro-LEDs with negligible sidewall surface nonradiative recombination

〇Xue-Lun Wang1,2, Xixi Zhao1, Tokio Takahashi1, Daisuke Ohori3, Seiji Samukawa4,3 (1.AIST, 2.IMaSS, Nagoya Univ., 3.AIMR, Tohoku Univ., 4.NYCU)
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[23p-21C-14]In-plane polarization control of radiation from (0001) InGaN with micro-rectangular structures inducing anisotropic strain relaxation

〇Shuhei Ichikawa1,2, Yoshinobu Matsuda3, Mitsuru Funato3, Yoichi Kawakami3, Kazunobu Kojima1 (1.Grad. Sch. of Eng., Osaka Univ., 2.Research Center for UHVEM, Osaka Univ., 3.Kyoto Univ.)
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[23p-21C-15]Characteristics of InGaN-based red LED with blue and green active layers as underlayers

〇Koji Okuno1, Koichi Goshonoo1, Masaki Ohya1 (1.Toyoda Gosei)
6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Highlighted Presentation

[23p-21C-16]Demonstration of stacked InGaN full color monolithic micro LED display

〇Koichi Goshonoo1, Koji Okuno1, Masaki Ohya1 (1.Toyoda Gosei)
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