[23p-31A-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[23p-31A-1] [The 55th Young Scientist Presentation Award Speech] High-speed growth of thick high-purity β-Ga₂O₃ layers by low-pressure hot-wall MOVPE and future prospects for device applications

〇Junya Yoshinaga^1,2, Guanxi Piao¹, Kazutada Ikenaga¹, Haruka Tozato², Takahito Okuyama², Ken Goto², Yoshinao Kumagai² (1.TAIYO NIPPON SANSO Corp., 2.Tokyo Univ. of Agric. and Tech.)

Keywords:

Beta gallium oxide,Metalorganic vapor phase epitaxy,Power device

In this study, MOVPE growth of high-purity β-Ga₂O₃ thick films using TMGa, which has a high vapor pressure, was investigated. The growth rate increased linearly with increasing TMGa supply rate, and a high growth rate of over 16 μm/h, comparable to the HVPE method, was achieved. SIMS impurity concentrations of H, C, N, and Si were below their respective background levels at all growth rates. Prospects for device applications of MOVPE-grown β-Ga₂O₃ films will also be presented.