[23p-31A-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices" | The 71st JSAP Spring Meeting 2024

Session Details

Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[23p-31A-1~15]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Mar 23, 2024 1:00 PM - 5:00 PM JST
Sat. Mar 23, 2024 4:00 AM - 8:00 AM UTC

31A (Building No. 3)

Takayoshi Oshima(NIMS), Riena Jinno(Univ of Tokyo)

1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)

[23p-31A-1][The 55th Young Scientist Presentation Award Speech] High-speed growth of thick high-purity β-Ga₂O₃ layers by low-pressure hot-wall MOVPE and future prospects for device applications

〇Junya Yoshinaga^1,2, Guanxi Piao¹, Kazutada Ikenaga¹, Haruka Tozato², Takahito Okuyama², Ken Goto², Yoshinao Kumagai² (1.TAIYO NIPPON SANSO Corp., 2.Tokyo Univ. of Agric. and Tech.)

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[23p-31A-2]High-Crystallinity Thick β -Ga₂O₃ Epitaxial Layer Grown by Liquid Phase Epitaxy

〇Hiroaki Tadokoro¹, Zhijin Chen¹, Miyuki Miyamoto¹, Teruo Kamura¹ (1.Mitsubishi Gas Chemical)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[23p-31A-3]Critical layer thickness of a-(AlGa)₂O₃ grown on sapphire by molecular beam epitaxy

〇Hironori Okumura¹ (1.Univ. of Tsukuba)

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[23p-31A-4]Electrical characteristics of α-Ga₂O₃ grown on sapphire by MOCVD

〇Hironori Okumura¹ (1.Univ. of Tsukuba)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[23p-31A-5]Thermodynamic study of (Al_xGa_1-x)₂O₃ growth by molecular beam epitaxy

〇Rie Togashi¹, Masataka Higashiwaki^2,3, Yoshinao Kumagai⁴ (1.Sophia Univ., 2.Osaka Metropolitan Univ., 3.NICT, 4.Tokyo Univ. of Agric. and Tech.)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[23p-31A-6]Growth of α-(Al,Ga)₂O₃ Lattice Matched to α-Cr₂O₃

〇Riena Jinno¹, Takayoshi Oshima², Yuichi Oshima², Susumu Fukatsu¹ (1.UTokyo, 2.NIMS)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[23p-31A-7]High temperature growth of α-Ga₂O₃ thin films on c, a, m, n, r oriented sapphire substrates by mist chemical vapor deposition

Hiroto Tamura¹, 〇Kazuyuki Uno¹ (1.Wakayama Univ.)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[23p-31A-8]Structure of threading dislocation in α-Ga₂O₃ thin film on sapphire substrate

〇Hitoshi Takane¹, Shinya Konishi¹, Yuichiro Hayasaka², Ryo Ota³, Takeru Wakamatsu¹, Yuki Isobe¹, Kentaro Kaneko⁴, Katsuhisa Tanaka¹ (1.Kyoto Univ., 2.Tohoku Univ., 3.Hokkaido Univ., 4.Ritsumeikan Univ.)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[23p-31A-9]Crystal growth of β-Ga₂O₃on the substrate using MoO₃ as flux

Yoshiki Kasai¹, 〇Toshinori Taishi¹ (1.Shinshu Univ.)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[23p-31A-10]Metal catalyst effect on β-Ga₂O₃ growth using tri-halide vapor phase epitaxy

〇(M1)Kosuke Taguchi¹, Kentaro Ema², Kohei Sasaki², Hisashi Murakami¹ (1.Tokyo Univ. of Agri. and Tech., 2.Novel Crystal Technology, Inc.)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)English Presentation

[23p-31A-11]Investigation of interface traps in β-(AlGa)₂O₃/Ga₂O₃ heterostructure by dynamic capacitance dispersion technique

〇(DC)Fenfen Fenda Florena¹, Aboulaye Traore^1,2, Ryo Morita¹, Yun Jia¹, Hironori Okumura^1,2, Takeaki Sakurai^1,2 (1.Univ. Tsukuba, 2.Japanese - French Lab. for Semiconductor Physics and Technology (J-FAST), Univ. Grenoble Alpes, Univ. Tsukuba)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[23p-31A-12]Electrical properties of Hf-doped α-Ga₂O₃ thin films

〇Yuki Isobe¹, Takeru Wakamatsu¹, Hitoshi Takane¹, Kentaro Kaneko², Katsuhisa Tanaka¹ (1.Kyoto Univ., 2.Ritsumeikan Univ.)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)English Presentation

The 71st JSAP Spring Meeting 2024

Session Details