[23p-31A-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[23p-31A-10] Metal catalyst effect on β-Ga₂O₃ growth using tri-halide vapor phase epitaxy

〇(M1)Kosuke Taguchi¹, Kentaro Ema², Kohei Sasaki², Hisashi Murakami¹ (1.Tokyo Univ. of Agri. and Tech., 2.Novel Crystal Technology, Inc.)

Keywords:

semiconductor,vapor phase epitaxy