[23p-31A-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[23p-31A-12] Electrical properties of Hf-doped α-Ga₂O₃ thin films

〇Yuki Isobe¹, Takeru Wakamatsu¹, Hitoshi Takane¹, Kentaro Kaneko², Katsuhisa Tanaka¹ (1.Kyoto Univ., 2.Ritsumeikan Univ.)

Keywords:

Gallium Oxide,mist CVD

The α-Ga2O3 semiconductor, which possesses an ultra wide bandgap of 5.6 eV, has attracted attention as a potential material for power devices. In this study, we attempted to fabricate Hf-doped α-Ga2O3 thin films by mist CVD method and evaluated their electrical properties.