[23p-31A-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[23p-31A-15] N₂-diluted H₂ gas etching of (-102) β-Ga₂O₃ performed at atmospheric pressure

〇Takayoshi Oshima¹, Rie Togashi², Yuichi Oshima¹ (1.NIMS, 2.Sophia Univ.)

Keywords:

Ga2O3,etching