Presentation Information
[23p-31A-2]High-Crystallinity Thick β -Ga2O3 Epitaxial Layer Grown by Liquid Phase Epitaxy
〇Hiroaki Tadokoro1, Zhijin Chen1, Miyuki Miyamoto1, Teruo Kamura1 (1.Mitsubishi Gas Chemical)
Keywords:
Ga2O3,Epitaxial Growth
In epitaxial growth of β -Ga2O3, vapor phase epitaxy (VPE) was generally applied. However, there is still room for improvement in terms of crystal quality and growth rate. In contrast, liquid phase epitaxy (LPE), which is capable of excellent crystal quality and fast growth rate, has not been reported for homo-epitaxial growth of β -Ga2O3, and its characteristics are not yet clear. Therefore, this research achieved LPE growth of β -Ga2O3 epitaxial layer on β -Ga2O3 substrate. The LPE growth behavior and epitaxial layer characteristics will be reported.