Presentation Information
[23p-31A-7]High temperature growth of α-Ga2O3 thin films on c, a, m, n, r oriented sapphire substrates by mist chemical vapor deposition
Hiroto Tamura1, 〇Kazuyuki Uno1 (1.Wakayama Univ.)
Keywords:
gallium oxide,mist chemical vapor deposition,epitaxial growth
α-Ga2O3 was grown on c-, a-, m-, n-, and r-plane sapphire substrates at high temperatures from 600 to 750°C. Since α-type gallium oxide is semistable, a phase transition to β-type was reported above 700°C. When gallium oxide was grown on a c-plane sapphire substrate, κ-type and β type appeared above 600°C. However, α-type gallium oxide was epitaxially grown on the other orientations, except for the r-plane at 700°C or higher.