Presentation Information
[23p-31A-8]Structure of threading dislocation in α-Ga2O3 thin film on sapphire substrate
〇Hitoshi Takane1, Shinya Konishi1, Yuichiro Hayasaka2, Ryo Ota3, Takeru Wakamatsu1, Yuki Isobe1, Kentaro Kaneko4, Katsuhisa Tanaka1 (1.Kyoto Univ., 2.Tohoku Univ., 3.Hokkaido Univ., 4.Ritsumeikan Univ.)
Keywords:
Gallium oxide,Threading dislocation,TEM
α-Ga2O3, with a bandgap of 5.3 eV, is a promising material for next-generation power devices. However, it is well known that there are numerous threading dislocations in α-Ga2O3 films on sapphire substrates. To improve the reliability of its device, it is required to clarify how threading dislocations have impacts on device performance. In this study, we analyze the structure of threading dislocations in α-Ga2O3 films on sapphire substrates at the atomic scale.