[23p-31A-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[23p-31A-9] Crystal growth of β-Ga₂O₃ on the substrate using MoO₃ as flux

Yoshiki Kasai¹, 〇Toshinori Taishi¹ (1.Shinshu Univ.)

Keywords:

beta-Ga2O3,crystal growth,thin film

Crystal growth of β-Ga₂O₃ on the substrate using MoO₃ as flux is investigated. After the growth, thin film with the thicness of several μm was deposited on the (010) β-Ga₂O₃ substrate, and it was found that (010) β-Ga₂O₃ thin film was formed.