Presentation Information

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[23p-31B-12]Evaluation of Charge Transfer Doping to WSe₂-FET via Deposition of F6-TCNNQ

Daisuke Horiba¹, Takuya Kojima¹, Kensho Matsuda¹, Kohei Sakanashi¹, Shohei Kumagai², Toshihiro Okamoto², Nobuyuki Aoki¹ (1.Chiba Univ., 2.TITech)

Keywords:

WSe2,doping effect,F6-TCNNQ

By forming a monolayer-molecular film of F6-TCNNQ on WSe₂, we demonstrated p-type doping by charge transfer to WSe₂-FET. We will also discuss an evaluation comparing the doping effect with F4-TCNQ, which has been performed so far, and an evaluation using X-ray photoelectron spectroscopy.

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Presentation Information

[23p-31B-12]Evaluation of Charge Transfer Doping to WSe2-FET via Deposition of F6-TCNNQ

Keywords:

[23p-31B-12]Evaluation of Charge Transfer Doping to WSe₂-FET via Deposition of F6-TCNNQ