Presentation Information
[23p-31B-2]Selective detection of Γ-Γ tunneling and K-Γ tunneling in WSe2/h-BN/WSe2 heterostructures
〇Kei Kinoshita1, Rai Moriya1, Seiya Kawasaki1, Momoko Onodera1, Yijin Zhang1, Kenji Watanabe2, Takashi Taniguchi2, Takao Sasagawa3, Tomoki Machida1 (1.IIS Univ. Tokyo, 2.NIMS, 3.MSL Tokyo Tech.)
Keywords:
TMD,tunneling,negative differential resistance
We fabricated WSe2/h-BN/WSe2 tunnel junctions using mono- to four-layer WSe2 and compared the hole tunneling characteristics. For the source-side WSe2 with monolayer and bilayer thickness, tunneling from the K point was observed. However, for three- and four-layer thicknesses, tunneling was detected from the Γ point. Moreover, we observed that tunneling currents, while conserving momentum between the Γ points, exhibited significantly large peak-to-valley ratios (PVRs) reaching a maximum value of 63.6, nearly three times larger than the top data in conventional 2D-material-based resonant tunneling devices.