Presentation Information

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-31B-3]Observation of negative differential resistance and clarification for formation mechanism of band structure using resonant tunneling devices based on transition metal dichalcogenides

〇Seiya Kawasaki¹, Kei Kinoshita¹, Momoko Onodera¹, Rai Moriya¹, Yijin Zhang¹, Satoru Masubuchi¹, Kenji Watanabe², Takashi Taniguchi², Takao Sasagawa³, Tomoki Machida¹ (1.IIS Univ. Tokyo, 2.NIMS, 3.MSL Tokyo Tech.)

Keywords:

resonant tunneling,TMD,band

We investigated the Γ-valley states in the valence band (VB) of (1) a minigap of multilayer p⁺-MoS₂ and (2) WSe₂/MX₂ hetero-bilayer (HBL) (M = W, Mo; X = Se, S) by measuring resonant tunneling to VB-Γ in the van der Waals tunnel junctions. We observed (1) the minigap induced negative differential resistance is robustness to the number of layers and changing to the temperature, (2) the HBL band structure changes to material combination and the band formation mechanism differs between hetero and homo bilayers.

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