Presentation Information
[23p-31B-4]Direct observation of electronic band structure in Janus monolayer transition metal dichalcogenides
〇(M2)Shunsuke Akatsuka1, Masato Sakano1, Hiroshi Nakajo2,3, Toshiaki Kato2, Naoya Yamaguchi4, Fumiyuki Ishii4, Takato Yamamoto1, Natsuki Mitsuishi5, Kenji Watanabe6, Takashi Taniguchi6, Miho Kitamura7, Koji Horiba7, Katsuaki Sugawara8,9, Seigo Souma9, Takafumi Sato8,9, Hiroshi Kumigashira10, Yuta Seo11, Satoru Masubuchi11, Tomoki Machida11, Kyoko Ishizaka1,5 (1.QPEC and Dept. of Appl. Phys., The Univ. of Tokyo, 2.Graduate School of Engineering, Tohoku Univ., 3.KOKUSAI ELECTRIC CORP., 4.NanoMaRi Kanazawa Univ., 5.CEMS, RIKEN, 6.NIMS, 7.QST, 8.Dept. Physics, Tohoku Univ., 9.WPI-AIMR, Tohoku Univ., 10.IMRAM, Tohoku Univ., 11.IIS, The Univ. of Tokyo)
Keywords:
2D materials,ARPES,Janus TMD
In this presentation, we report the results of direct observation of the electronic band structure of monolayer Janus WSeS by micro-focused angle-resolved photoemission spectroscopy (μ-ARPES).
Janus WSeS is expected to realize polarity-derived electronic properties such as Rashba-type spin splitting. Janus WSeS were prepared by plasma treatment of monolayer WSe2 obtained by mechanical exfoliation with in situ photoluminescence (PL) observation.
Janus WSeS is expected to realize polarity-derived electronic properties such as Rashba-type spin splitting. Janus WSeS were prepared by plasma treatment of monolayer WSe2 obtained by mechanical exfoliation with in situ photoluminescence (PL) observation.