[23p-31B-1~18] 17.3 Layered materials

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-31B-5] Nanoscale Observation of a MoS₂ stack forming pn junction using
scanning nonlinear dielectric microscopy

〇(M2)Taiyo Ishizuka^1,2, Kohei Yamasue² (1.Tohoku Univ., 2.RIEC, Tohoku Univ.)

Keywords:

layered semiconductor,scanning nonlinear dielectric microscopy,local CV characteristics measurement

MoS₂ is attracting attention as an alternative semiconductor to silicon and its application to devices requires a microscopic understanding of its physical properties. In this study, we measured a pn junction of MoS₂ using scanning nonlinear dielectric microscopy (SNDM). The results showed that the capacitance change was smaller in the stacked area, suggesting depletion due to the pn junction. This result indicates that MoS₂ pn junctions can be evaluated by SNDM.