[23p-52A-1~18] 13.7 Compound and power devices, process technology and characterization

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[23p-52A-13] Understanding the atmosphere effect on the nitridation kinetics at the SiC/SiO₂ interface using NO

〇Ryu Sasaki¹, Takashi Onaya², Koji Kita^1,2 (1.School of Eng., The Univ. of Tokyo, 2.GSFS, The Univ. of Tokyo)

Keywords:

SiC,nitridation,NO annealing

In order to provide a correct understanding of the nitridation kinetics at the SiC/SiO₂ interface using NO annealing, intentional mixing of different gases was attempted during annealing in a NO atmosphere. The results indicated that there is a simultaneous N-incorporation and N-removal in this reaction process, and that these rates were strongly correlated with the SiC surface oxidation rate. While the N-removal rate constant exhibited a proportional relationship, the N-incorporation rate should be interpreted as a function where the rate of increase decreases with the enhancement of the SiC surface oxidation rate.