[23p-52A-1~18] 13.7 Compound and power devices, process technology and characterization

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[23p-52A-15] Reaction of NO molecule at 4H-SiC/SiO₂ interface and its orientation dependence: a first-principles study

〇Toru Akiyama¹, Hiroyuki Kageshima², Kenji Shiraishi³ (1.Mie Univ., 2.Shimane Univ., 3.Nagoya Univ.)

Keywords:

SiC,interface,first-principles calculations