[23p-52A-1~18] 13.7 Compound and power devices, process technology and characterization

5:45 PM - 6:15 PM JST(8:45 AM - 9:15 AM UTC)

[23p-52A-18] [JSAP Kenji Natori Award Speech] Power Semiconductor Devices, History, Development, and Future Prospects

〇Tatsuhiko Fujihira¹ (1.Fuji Electric)

Keywords:

power semiconductor,package,equipment

History of power semiconductor devices started at the replacement of motor-generators, mercury-arc rectifiers, and thyratrons by metal rectifiers using such as copper-oxide or selenium, followed by the development of silicon power devices, such as rectifiers, thyristors, GTOs, bipolar power transistors, power MOSFETs, and IGBTs. Today, the development of WBG power devices are rapidly progressing. After looking-back those history and development, the author would like to discuss future prospects of power semiconductor devices including packaging technologies.