[23p-52A-1~18] 13.7 Compound and power devices, process technology and characterization

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[23p-52A-2] Effects of H⁺ implantation into SiC substrates before epitaxial growth

〇Masashi Kato¹, Ohga Watanabe¹, Shunta Harada², Hitoshi Sakane³ (1.NITech, 2.Nagoya Univ., 3.SHI ATEX Co. Ltd.)

Keywords:

SiC,ion implantation,dislocation