[23p-52A-1~18] 13.7 Compound and power devices, process technology and characterization

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[23p-52A-3] Carrier recombination in highly Al doped 4H-SiC

〇Masashi Kato¹, Kazuhiro Tanaka¹ (1.NITech)

Keywords:

SiC,carrier recombination