[23p-52A-1~18] 13.7 Compound and power devices, process technology and characterization

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[23p-52A-5] Comparison of Al <0001> channeling/randomly injected electron stopping power ratio in 4H-SiC with <001> channeling/randomly injected electron stopping power ratio in Si

〇Kazuhiro Mochizuki¹, Tomoaki Nishimura¹, Tomoyoshi Mishima¹ (1.Hosei Univ.)

Keywords:

SiC,ion implantation,electron stopping power