[23p-52A-1~18] 13.7 Compound and power devices, process technology and characterization

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[23p-52A-7] Measurement of Transient Heat Transfer at Organic/Semiconductor Interface based on Optical-Interference Contactless Thermometry (OICT)

〇Jiawen Yu¹, Hiroaki Hanafusa¹, Seiichirou Higashi¹ (1.Hiroshima Univ.)

Keywords:

semiconductor,SiC,interfacial thermal resistance

In power semiconductor packaging,heat generated during device operation must be efficiently dissipated to the outside. Interfacial thermal resistance (ITR) is a major factor hindering heat transfer at the interface. However, experimentally measuring the interfacial thermal resistance still remains a challenging task. The optical-interference contactless thermometry (OICT), which we have been developing independently, can obtain the transient temperature distribution in a wafer with high temporal and spatial resolution by analyzing the reflectance change of the wafer as the temperature changes. In this study, we aim to measure the interfacial thermal resistance and transient heat transfer at the organic layer/semiconductor interface using OICT.