Presentation Information

[23p-52A-8][The 45th Young Scientist Award Speech] Mobility improvement in heavily-doped SiC (0001), (1120) and (1100) MOSFETs using oxidation minimizing process

〇Keita Tachiki1, Kyota Mikami1, Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1.Kyoto Univ.)

Keywords:

SiC