[23p-P03-1~6] 13.2 Exploratory Materials, Physical Properties, Devices

[23p-P03-1] Spectral photosensitivity analysis of Mg₂Si photodiodes formed under various
formation time of p-type diffusion layer.

〇Hibiki Katsumata¹, Imaizumi Naoki¹, Uematsu Tatsuya¹, Sakane Shunya¹, Udono Haruhiko¹ (1.Ibaraki Univ.)

Keywords:

silicide semiconductor,photodiode,photosensitivity