[23p-P03-1~6] 13.2 Exploratory Materials, Physical Properties, Devices

[23p-P03-3] Reaction of Ag thin film deposited on Mg₂Si substrate after heat treatment

〇Hideto Takei¹, Naoki Imaizumi¹, Kaito Ojima¹, Hiroto Kubota¹, Syunya Sakane¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:

photodiode,pn junction

We have been developing photodiodes in the short-wave infrared (SWIR) region using Mg₂Si, and have achieved high photosensitivity with a single pn junction photodiode device we have fabricated. However, the reaction between Ag and Mg₂Si surface has not been investigated in detail. In this study, the Ag thin film deposited on Mg₂Si is heat-treated, and the surface condition after heat treatment is evaluated to investigate the reaction between Ag and Mg₂Si surface in detail.