[24a-12F-1~11] 15.7 Crystal characterization, impurities and crystal defects

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[24a-12F-1] Numerical study of temperature distribution in a crystal as a function of emissivity

〇Koichi Kakimoto¹, Satoshi Nakano² (1.NICHe, Tohoku Univ., 2.Riam, Kyushu Univ.)

Keywords:

semiconductor,Sillicon

We performed numerical anlysis of temperature distiburion in a CZ-Si crystal as a function of doping concentration. The gradient in a highly doped crystal is larger than that in a non-doped crystal/