Session Details
[24a-12F-1~11]15.7 Crystal characterization, impurities and crystal defects
Sun. Mar 24, 2024 9:00 AM - 12:00 PM JST
Sun. Mar 24, 2024 12:00 AM - 3:00 AM UTC
Sun. Mar 24, 2024 12:00 AM - 3:00 AM UTC
12F (Building No. 1)
Kazuhisa Torigoe(SUMCO), Eiji Kamiyama(GlobalWafers Japan)
[24a-12F-1]Numerical study of temperature distribution in a crystal as a function of emissivity
〇Koichi Kakimoto1, Satoshi Nakano2 (1.NICHe, Tohoku Univ., 2.Riam, Kyushu Univ.)
[24a-12F-2]Numerical study of factor analysis for twisting during CZ-Ga2O3 growth
〇Koichi Kakimoto1, aketoshi Tomida2, Kochurikhin Vladimir2, Kei Kamada4, Satoshi Nakano3, Akira Yoshikawa4 (1.NICHe, Tohoku Univ., 2.C&A, 3.RIAM, Kyushu Univ., 4.IMR, Tohoku)
[24a-12F-3]Estimation of doping effect on elastic modulus of Si crystal by ab initio calculation
〇Eiji Kamiyama1,2, Koji Sueoka2 (1.Globalwafers Japan Co. Ltd, 2.Okayama Pref. Univ.)
[24a-12F-4]ab initio Calculations for the Slater-Condon parameters
〇Jun Inagaki1 (1.Non-Affiliated)
[24a-12F-5]Total energy prediction for Si−O binary structures based on a linear-regression machine-learning model
〇Yusuke Noda1, Eiji Kamiyama1,2, Hiroya Iwashiro2, Koji Sueoka1 (1.Okayama Pref. Univ., 2.GlobalWafers Japan Co., Ltd.)
[24a-12F-6]High-speed Prediction of oxygen precipitation behavior in Czochralski Si wafers by Digital Twin
〇Takuya Kusunoki1, Yuta Nagai1, Susumu Maeda1, Hironori Banba1 (1.GlobalWafers Japan Co.,Ltd.)
[24a-12F-7]Quantitative analysis of Sb donors in Si by PL spectroscopy (1) Calibration curve
〇Yoshiji Miyamura1, Ryosuke Sakemi1, Daigo Hayashi1, Shin-ichi Nishizawa1, Michio Tajima2 (1.Kyushu Univ. RIAM, 2.NPERC-J)
[24a-12F-8]Quantitative analysis of Sb donors in Si by PL spectroscopy (2) Analysis of Si co-doped with Sb and P
〇Daigo Hayashi1, Ryosuke Sakemi1, Yoshiji Miyamura1, Shin-ichi Nishizawa1, Michio Tajima2 (1.Kyushu Univ. RIAM, 2.NPERC-J)
[24a-12F-9]Fe gettering behavior of SiHx and C2Hy mixture molecular ion implanted Si epi-wafer
〇Ryo Hirose1, Ayumi Masada1, Takeshi Kadono1, Ryosuke Okuyama1, Koji Kobayashi1, Akihiro Suzuki1, Sho Nagatomo1, Yoshihiro Koga1, Kazunari Kurita1 (1.SUMCO CORPORATION)
[24a-12F-10]Recrystallization Model Analysis for Amorphous Morphology in Hydrocarbon-Molecular-Ion-Implanted Si Wafer Surface
〇kouji kobayashi1,2, Ryosuke Okuyama1, Takeshi Kadono1, Ayumi Masada1, Ryo Hirose1, Akihiro Suzuki1, Yoshihiro Koga1, Koji Sueoka3, Kazunari Kurita1 (1.SUMCO, 2.Grad. Sch. of Comput. Sci. and Sys. Eng., Okayama Pref. Univ., 3.Dept. of Inf. and Commun. Eng., Okayama Pref. Univ.)
[24a-12F-11]Impact of Hydrogen on Strain Evolution at SiO2/Si Interface
〇Akihiro Suzuki1, Ryosuke Okuyama1, Koji Kobayashi1, Takeshi Kadono1, Ayumi Masada1, Ryo Hirose1, Yoshihiro Koga1, Kazutoshi Takahashi2, Kazunari Kurita1 (1.SUMCO CORPORATION, 2.Synchrotron Light Application Center, Saga Univ.)