[24a-12F-1~11] 15.7 Crystal characterization, impurities and crystal defects

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[24a-12F-9] Fe gettering behavior of SiH_x and C₂H_y mixture molecular ion implanted Si epi-wafer

〇Ryo Hirose¹, Ayumi Masada¹, Takeshi Kadono¹, Ryosuke Okuyama¹, Koji Kobayashi¹, Akihiro Suzuki¹, Sho Nagatomo¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

Keywords:

semiconductor,gettering,silicon wafer