[24a-12H-1~9] 6.1 Ferroelectric thin films

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[24a-12H-7] Piezoelectricity and Ferroelectricity of High Sc Concentration ScGaN Film prepared by sputtering method

〇Masato Uehara¹, Kenichi Hirata¹, Yoshiko Nakamura², Shinnosuke Yasuoka², Sri Ayu Anggraini¹, Kazuki Okamoto², Hiroshi Yamada¹, Hiroshi Funakubo², Morito Akiyama¹ (1.AIST, 2.Tokyo Tech.)

Keywords:

piezoelectric,ferroelectric,gallium nitride

Sc_xGa_1-xN with high Sc concentration (x≈0.5) was prepared by sputtering method. The maximum piezoelectric constant d₃₃ was higher compared with previous work. The applied electric field E_c in ferroelectricity was a small value. In addition, we will also discuss on the properties of films prepared by using the ScGa alloy target.