Session Details

[24a-12H-1~9]6.1 Ferroelectric thin films

Sun. Mar 24, 2024 9:00 AM - 11:30 AM JST
Sun. Mar 24, 2024 12:00 AM - 2:30 AM UTC
12H (Building No. 1)
Isaku Kanno(Kobe Univ.), Tomoaki Yamada(Nagoya Univ.)

[24a-12H-1]kt2 hysteresis curves of pure AlN thin film SMR

〇Ayaka Hanai1,2, Yanagitani Takahiko1,2,3,4 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST, 4.JST-FOREST)

[24a-12H-2]Influence of thickness for Pt bottom electrode on film properties of AlScN

〇Soshun Doko1, Naoko Matsui1, Toshikazu Irisawa1, Koji Tsunekawa1, Yoshiko Nakamura2, Kazuki Okamoto2, Hiroshi Funakubo2 (1.Canon ANELVA Corp., 2.Tokyo Tech.)

[24a-12H-3]High stability of ferroelectricity against hydrogen gas in (Al,Sc)N thin films

〇(P)Nana Sun1, Kazuki Okamoto1, Shinnosuke Yasuoka1, Naoko Matsui2, Toshikazu Irisawa2, Koji Tsunekawa2, Soshun Doko2, Hiroshi Funakubo1 (1.Tokyo Tech., 2.Canon ANELVA Corp.)

[24a-12H-4]Fabrication of Al1-xScxN/Si heterojunction by sputtering

〇Hiroto Yamada1, Norifumi Fujimura1, Takeshi Yoshimura1 (1.Osaka Metro. Univ.)

[24a-12H-5]SAW devices consisting of solid flat electrode on periodically polarization inverted structure of c-axis tilted piezoelectric thin film

〇Satoshi Matsumura1,2, Yohkoh Shimano1,2, Naoki Ohno1,2, Takahiko Yanagitani1,2,3,4, Cho Yasuo5 (1.Waseda Univ., 2.ZAIKEN, 3.JST-CREST, 4.JST-FOREST, 5.Tohoku Univ.)

[24a-12H-6]Increase of Sc solubility in AlN films by Ga substitution and their impact on ferroelectric and piezoelectric properties

Reika Ota1, Shinosuke Yasuoka1, Yoshiko Nakamura1, Kazuki Okamoto1, Hiroyuki Hara2, Daiki Shono2, Yoshihiro Ueoka2, Masami Mesuda2, 〇Hiroshi Funakubo1 (1.Tokyo Tech., 2.Tosoh Corp.)

[24a-12H-7]Piezoelectricity and Ferroelectricity of High Sc Concentration ScGaN Film prepared by sputtering method

〇Masato Uehara1, Kenichi Hirata1, Yoshiko Nakamura2, Shinnosuke Yasuoka2, Sri Ayu Anggraini1, Kazuki Okamoto2, Hiroshi Yamada1, Hiroshi Funakubo2, Morito Akiyama1 (1.AIST, 2.Tokyo Tech.)

[24a-12H-8]First-principles calculations of spontaneous polarization and piezoelectric constant in ScGaN

〇Kenji Hirata1, Masato Uehara1, Hiroshi Yamada1, Sri Ayu Anggraini1, Morito Akiyama1 (1.AIST)

[24a-12H-9]Local structure analysis of ScGaN film by XAFS

Yu Ikemoto2, Kenichi Hirata1, Hiroyuki Setoyama3, Shinya Ohmagari1, Sri Ayu Anggraini1, Hiroshi Yamada1,2, Morito Akiyama1, 〇Masato Uehara1,2 (1.AIST, 2.Kyushu Univ., 3.SAGA- LS)