Presentation Information

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[24a-12H-9]Local structure analysis of ScGaN film by XAFS

Yu Ikemoto², Kenichi Hirata¹, Hiroyuki Setoyama³, Shinya Ohmagari¹, Sri Ayu Anggraini¹, Hiroshi Yamada^1,2, Morito Akiyama¹, 〇Masato Uehara^1,2 (1.AIST, 2.Kyushu Univ., 3.SAGA- LS)

Keywords:

piezoelectric,XAFS,Gallium nitride

ScGaN exhibits excellent piezoelectricity and ferroelectricity. Although these properties are thought to be influenced by local atomic structure, research remains limited to first-principles calculations. In this study, we investigated the local structure around Sc and Ga by synchrotron radiation XAFS. We found that the structural change with respect to Sc concentration differs around Sc and Ga.

Back to Session information