[24a-12K-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[24a-12K-2] Comparing of dark current and trap levels on Mg₂Si diode by electrode structure

〇(B)Takehiro Ota¹, Kyoko Shimizu¹, Tatsuya Uematsu², Haruhiko Udono², Isao Tsunoda¹, Kenichiro Takakura¹ (1.NIT Kumamoto college, 2.Ibaraki Univ)

Keywords:

semiconductor,silicide

In order to utilize Mg₂Si pn junction diodes as high-sensitive infrared-light detector, the relationship between dark current and carrier traps was investigated using a deep level transient spectroscope. It was found that electron traps caused by Au, used as an electrode, diffuse and forms in n-Mg₂Si and increases the dark current of the pn junction diode.