The 71st JSAP Spring Meeting 2024
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Session Details

Oral presentation13 Semiconductors : 13.2 Exploratory Materials, Physical Properties, Devices

[24a-12K-1~11]13.2 Exploratory Materials, Physical Properties, Devices

Sun. Mar 24, 2024 9:00 AM - 12:00 PM JST
Sun. Mar 24, 2024 12:00 AM - 3:00 AM UTC
12K (Building No. 1)
Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[24a-12K-1][The 55th Young Scientist Presentation Award Speech] Fabrication and characterization of Mg2Si thermophotovoltaic cell for thermo-photovoltaic power generation

〇Daisuke MIyago1, Shunya Sakane1, Haruhiko Udono1 (1.Ibaraki Univ.)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[24a-12K-2]Comparing of dark current and trap levels on Mg2Si diode by electrode structure

〇(B)Takehiro Ota1, Kyoko Shimizu1, Tatsuya Uematsu2, Haruhiko Udono2, Isao Tsunoda1, Kenichiro Takakura1 (1.NIT Kumamoto college, 2.Ibaraki Univ)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[24a-12K-3]Study of Mg evaporation mechanism in Mg2Si heated under high vacuum

〇Shimon Watahiki1, Tatsuya Uematsu1, Hidetsugu Motoki1, Yusei Kimura1, Akito Ayukawa1, Shunya Sakane1, Haruhiko Udono1 (1.Ibaraki Univ.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[24a-12K-4]Micro-Raman Tomographic Measurement on Subsurface of Magnesium Silicide Wafer

Kazuma Watanabe1, 〇Teppei Onuki1, Hirotaka Ojima1, Jun Shimizu1, Libo Zhou1, Haruhiko Udono1 (1.Ibaraki Univ.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[24a-12K-5]Solar cells of B-ion-implanted p-BaSi2 films prepared by sputtering

〇Takumi Sato1, Takenaka Haruki1, Rui Du1, Yoichiro Koda2, Masami Mesuda2, Kaoru Toko1, Takashi Suemasu1 (1.Tsukuba Univ., 2.Tosoh Corporation)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)English Presentation

[24a-12K-6]Carrier Properties Control of As-doped BaSi2 Grown by Molecular Beam Epitaxy

〇(M1)Nurfauzi Abdillah1, Sho Aonuki1, Takashi Suemasu1 (1.Univ. of Tsukuba)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)English Presentation

[24a-12K-7]Effect of growth temperature on photoresponsivity of BaSi2 formed on a-SiC/TiN/SiO2

〇(D)Rui Du1, Takenaka Haruki1, Takumi Sato1, Yoichiro Koda2, Masami Mesuda2, Kaoru Toko1, Takashi Suemasu1 (1.Univ. of Tsukuba, 2.Tosoh Corp.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[24a-12K-8]Growth of BaSi2 films with single crystal orientation on tilted Si substrates by close-spaced evaporation

〇Kosuke Hara1, Yutaka Maki1, Kanako Ruike1, Junji Yamanaka1, Keisuke Arimoto1 (1.Univ. of Yamanashi)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[24a-12K-9]Evaluation of hole transport layer for its application to BaSi2 solar cells

〇Yuka Fukaya1, Sho Aonuki1, Kaori Takayanagi1, Ai Iwai1, Kaoru Toko1, Takashi Suemasu1 (1.Univ. Tsukuba)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[24a-12K-10]Introduction of MoOx films fabricated by sputtering for BaSi2 hetero-junction solar cells

〇Koki Hayashi1, Sho Aonuki1, Haruki Takenaka1, Takumi Sato1, Yoichiro Koda2, Masami Mesuda2, Kaoru Toko1, Takashi Suemasu1 (1.Univ. Tsukuba, 2.Tosoh Corporation)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[24a-12K-11]Computational materials screening for back metal in double heterojunction BaSi2 solar cells

〇Tomoaki Yazaki1, Keisuke Arimoto1, Junji Yamanaka1, Kosuke O. Hara1 (1.CCST, Univ. of Yamanashi)
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