[24a-12K-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[24a-12K-4] Micro-Raman Tomographic Measurement on Subsurface of Magnesium Silicide Wafer

Kazuma Watanabe¹, 〇Teppei Onuki¹, Hirotaka Ojima¹, Jun Shimizu¹, Libo Zhou¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:

Magnesium silicide,Subsurface damage on wafer,Micro Raman tomographic imaging

Manufacturing technology for Mg₂Si wafers, which is expected to be applied to visible-infrared imaging devices and thermal photovoltaic cells, has been studied. Micro-Raman tomography was applied as a sub-surface quality inspection method in the planarization and finishing processes. Micro Raman tomographic measurements (excitation wavelength 532 nm) were performed on a 1-inch diameter wafer with residual grinding marks, and color maps of the peak position and peak width of the Raman peak at wavenumber 258 cm^-1 were plotted. The distribution of the variation of each value was visible according to the residual damage in subsurface region with the depth of about 9mm.