[24a-12K-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[24a-12K-8] Growth of BaSi₂ films with single crystal orientation on tilted Si substrates by close-spaced evaporation

〇Kosuke Hara¹, Yutaka Maki¹, Kanako Ruike¹, Junji Yamanaka¹, Keisuke Arimoto¹ (1.Univ. of Yamanashi)

Keywords:

thermal evaporation,silicide,epitaxial growth