[24a-1BB-1~10] KS.1 Solid State Quantum Sensor Group

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[24a-1BB-10] Dependence of SiC-silicon vacancy charge state stability on doping conditions

〇Yuichi Yamazaki¹, Ryosuke Akashi¹, Masafumi Hanawa², Koichi Murata², Shin-ichiro Sato¹, Masanobu Miyawaki¹, Shiro Entani¹, Yuta Masuyama¹, Yuichiro Matsushita^1,3, Hidekazu Tsuchida², Kohda Makoto^1,4, Ohshima Takeshi^1,4 (1.QST, 2.CRIEPI, 3.Tokyo Tech., 4.Tohoku Univ.)

Keywords:

Spin defect,SiC,Doping condition dependence

For a silicon vacancy (VSi) in silicon carbide (SiC), to function as a quantum sensor, its charge state must be negative monovalence (VSi-). Charge state stability in devices composed of epitaxial layers with various properties is important for direct observation applications inside SiC power devices. In this study, we report the results of a systematic investigation of VSi charge state stability by varying the doping conditions and VSi concentration over a wide range.