[24a-22A-1~7] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[24a-22A-3] Nucleation stages of GaAs nanowires on Si(111) substrates by MBE

〇Kaito Nakama^1,2, Keisuke Minehisa^1,2, Hidetoshi Hashimoto^1,2, Fumitaro Ishikawa^1,2 (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE)

Keywords:

nanowire,Molecular Beam Epitaxy,III/V materials